The effect of neutron irradiation on the electrical properties of Mosfet transistors

Abstract

 the effect of neutron radiation on identical samples of MOSFET transistors N-MOSFET and P-MOSFET was studied by subjecting them to a neutron flux equal to 2.89 ´ 10¹¹ cm^-2·sec^-1 inside one of the irradiation channels in the Syrian MNSR reactor, and with the times of Irradiation ranging between (10 to 400) sec to test electrical and electronic transistor specifications and monitor changes in them before and after irradiation, especially I_DS-V_GS characteristic curves and threshold potential. The results showed a change in characteristic curves, which was represented by shifting of the threshold potential from its basic value with the increase of the irradiation time to the state of the breakdown of the transistor at a time of 400 sec. Within this framework, a detailed comparison was made of the effect of radiation on the two studied types.