Optical Properties of ZnO Film on Porous Silicon P-type Substrate

Abstract

 A film of ZnO deposited on two substrates of porous silicon (PS) sample p-type with different porosity, by dip-coating method. The structure of porous silicon substrates was studied using Atomic Force Microscopy (AFM) measurements, then diffuse and specular reflectance were determined by UV-Vis-NIR spectrophotometer before of ZnO film was deposited. The study was repeated again after ZnO film was deposited to see changes in optical and structural properties. The reflection spectrum was used to find the Refractive index, the optical energy gap, and the film thickness. The optical conductivity, and the electrical conductivity were determined.